the information provided herein is believed to be reliable at press time. sirenza microdevices assumes no responsibility for in accuracies or ommisions. sirenza microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at t he user?s own risk. prices and specifications are subject to change without notice. no patent rights or licenses to any of the circuits described herein are implied or granted to any third party. sirenza microdevices does not authorize or warrant any sirenza microdevices product for use in life-support devices and/or systems. copyright 2003 sirenza microdevices, inc. all worldwide rights reserved. 303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 1 eds-xxxxxx rev a advance the SDM-08060 60w power module is an impedance matched , single stage, push-pull class ab am plifier module suitable for use as a power amplifier driver or output stage. it is a drop in, no tune, solution fo r high power appli- cations requiring high efficiency, excel- lent linearity, and unit to unit repeatability. key specifications parameter description: test conditions z in = z out = 50 , v dd = 28.0v, i d1 =300ma, i d2 =300ma, t flange = 25oc unit min. typ. max. frequency frequency of operation mhz 869 - 894 p 1db output power at 1db compression, 881 mhz w 60 65 - gain gain at 12w cdma output (single carrier is-95), 881mhz db 16 17 - gain flatness peak to peak gain variation, 869 - 894mhz db - 0.3 .5 efficiency drain efficiency at 60w pep, 880mhz and 881mhz % 32 34 - irl input return loss 12w cw output power, 869 - 894mhz db - -15 -12 imd 3rd order imd product, 60w pep, 880mhz and 881mhz dbc - -31 -28 delay signal delay from pin 3 to pin 8 ns - 4.0 - phase linearity deviation from linear phase (peak to peak) deg - 0.5 - functional block diagram SDM-08060 869-894 mhz class ab 60w power amplifier module product features application ? 50 w rf impedance ? 60w output p 1db ? 28 volt operation ? high gain: 17 db typical ? high efficiency ? base station pa driver ? repeater ? cdma ? gsm / edge product description
303 s. technology court, broomfield, co 8002 1 phone: (800) smi-mmic http://www.sirenza.com 2 eds-xxxxxx rev a advance SDM-08060 869-894 mhz 60w amp pin out description pin # function description 1,5 v gs this is the gate bias for the one side of the amplifier module. 2,4,7,9 ground module topside ground. 3 rf input module rf input. this pin is internally connected to dc ground. do not apply dc voltages to the rf leads. care must be taken to protect against video transients that may damage the active devices. 6,10 v dd this is the drain feed for the amplifier module. see note 1. 8rf output module rf output. this pin is internally connected to dc ground. do not apply dc voltages to the rf leads. care must be taken to protect against video transients that may damage the active devices. flange gnd exposed area on the bottom side of the package provides electrical ground and a thermal transfer path for the device. proper mounting insures optimal performance and the highest reliablility. see sirenza applications note:an-054 detailed installation instructions for power modules. simplified device schematic absolute maxi mum ratings parameters value unit drain voltage (v dd )35v rf input power +37 dbm load impedance for continuous operation without damage 5:1 vswr control (gate) voltage, vdd = 0 vdc 15 v output device channel temperature +200 oc lead temperature during solder reflow +210 oc operating temperature range -20 to +90 oc storage temperature range -40 to +100 oc operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation see typical setup values on the key specification table on the first page of the datasheet. caution: esd sensitive appropriate precaution in handling, packaging and testing devices must be observed. note 1: internal rf decoupling is included on all bias leads. no additional bypass elements are required, however some applications may require energy storage on the drain leads to accommodate time-varying waveforms. note 2: gate voltage must be applied coincident with or after application of the drain voltage to prevent potentially destructive os cillations. bias volt- ages should never be applied to a module unless it is terminated on both input and output. note 3: the vgs corresponding to a specific idq will vary from module to module and may vary between the two sides of a dual rf module by as much as 0.10 volts. this is due to the nor- mal die-to-die variation in threshold voltage of note 4: since the gate bias of an ldmos transistor changes with device temperature, it may be nec- essary to use a vgs supply with thermal com- pensation if operation over a wide temperature range is required. q1 q2 case flange = ground 1 2 3 4 5 6 7 8 9 10
303 s. technology court, broomfield, co 8002 1 phone: (800) smi-mmic http://www.sirenza.com 3 eds-xxxxxx rev a advance SDM-08060 869-894 mhz 60w amp package outline drawing mpo-103060 quality specifications parameter unit min typical max esd rating human body model v 8000 mttf 85 o c leadframe, 200 o c channel h 1.2 x 10 6 r th thermal resistance (junction to case) oc/w 1.5
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